MJD210T4G, onsemi MJD210G PNP Transistor, -5 A, -25 V, 3-Pin DPAK, Биполярный транзистор

PNP Power Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc
Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
These Devices are Pb-Free
MJD200 is the complementary NPN device

Datasheet

ESD Control Selection Guide V1