Microchip 1MB Parallel Flash Memory 32-Pin PLCC, SST39SF010A-70-4C-NHE, Флэш-память

SST39SF010A/020A/040 Parallel SuperFlash® Memory

The SST39SF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs.

Features

4.5-5.5V Read and Write Operations
Endurance – 100,000 cycles (typical)
Low Power Consumption - Active Current 10 mA, Standby Current 30 μA (typical values at 14 MHz)
Sector-Erase Capability – Uniform 4 Kbyte sectors
Read Access Time – 55 to 70 ns
Sector-Erase Time 18 ms
Chip-Erase Time: 70 ms (typical)
Byte-Program Time – 14 μs (typical)
Chip Rewrite Time – SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040 8 seconds (typical values)
Latched Address and Data
Automatic Write Timing – Internal VPP Generation
End-of-Write Detection – Toggle Bit – Data# Polling
TTL I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and Command Sets

Flash Memory, Microchip

Datasheet

ESD Control Selection Guide V1