Microchip 4Mbit Parallel Flash Memory 32-Pin PLCC, SST39LF040-55-4C-NHE, Флэш-память

SST39LF010/020/040 Parallel SuperFlash® Memory

The SST39LF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs.

Features

3.0-3.6V Read and Write Operations
Endurance – 100,000 cycles (typical)
Low Power Consumption - Active Current 5 mA, Standby Current 1 μA (typical values at 14 MHz)
Sector-Erase Capability – Uniform 4 Kbyte sectors
Read Access Time – 55 ns
Sector-Erase Time 18 ms
Chip-Erase Time: 70 ms (typical)
Byte-Program Time – 14 μs (typical)
Chip Rewrite Time – SST39LF010 2 seconds, SST39SF020 4 seconds, SST39SF040 8 seconds (typical values)
Latched Address and Data
Automatic Write Timing – Internal V_PP Generation
End-of-Write Detection – Toggle Bit – Data# Polling
CMOS I/O Compatibility
JEDEC Standard– Flash EEPROM Pinouts and Command Sets

Flash Memory, Microchip

1/2/4 Mbit (x8) Multi-Purpose Flash Datasheet

ESD Control Selection Guide V1