IGW15N120H3FKSA1 Maximum Continuous Collector Current, Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole

Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 1100 to 1600V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C
IGBT Discretes \u0026 Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.