IKQ75N120CT2XKSA1 Maximum Continuous Collector Current, Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.
High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint20% lower R th(jh) compared to TO-247 3 pinExtended collector-emitter pin creepage of 4.25 mmExtended clip creepage due to fully encapsulated front side of the packageHigher system power density – I c increase keeping the same system thermal performanceLower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247Higher reliability, extended lifetime of the device