FGH30S130P Maximum Continuous Collector Current, onsemi FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole

Discrete IGBTs, 1000V and over, Fairchild Semiconductor
The ON Semiconductor FGH30S130P/ is a 1300V, 30A IGBT featuring shorted-anode and field stop trench technologies. Soft switching applications are ideal for the FGH30S130P, with efficient conduction and high switching performance characteristics. The FGH30S130P IGBT can work in a parallel configuration and offers great avalanche capabilities. The FGH30S130P IGBT is designed for use in induction heating, microwave ovens and other household appliances.
TO-247 package High speed switching Superior conduction Low saturation voltage High input impedance
Versions Available:/a href=\"/web/p/products/8648849\""864-8849/a - pack of 2a href=\""/web/p/products/1663300\""166-3300/a - tube of 30
IGBT Discretes \u0026 Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.