IXA27IF1200HJ Maximum Continuous Collector Current, IXYS IXA27IF1200HJ IGBT, 43 A 1200 V, 3-Pin ISOPLUS247, Through Hole

IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltageShort circuit capability for 10usecPositive on-state voltage temperature coefficientOptional co-packed Sonic-FRD™ or HiPerFRED™ diodesInternational standard and proprietary high voltage packages
IGBT Discretes \u0026 Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.