FGH75T65SQDNL4 Maximum Continuous Collector Current, onsemi FGH75T65SQDNL4, P-Channel IGBT, 200 A 650 V, 4-Pin TO-247, Through Hole

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Extremely Efficient Trench with Field Stop TechnologyTJmax = 175°CImproved Gate Control Lowers Switching LossesSeparate Emitter Drive PinTO-247-4L for Minimal Eon LossesOptimized for High Speed SwitchingThese are Pb-Free DevicesSolar InverterUninterruptible Power Inverter SuppliesNeutral Point Clamp Topology